- PII
- S3034530825040021-1
- DOI
- 10.7868/S3034530825040021
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume / Issue number 4
- Pages
- 19-27
- Abstract
- Film composites Ti/TiO–SiO–Bi were formed by the method of one-stage pulsed plasma electrolytic oxidation (PEO). The obtained samples were studied by the methods of X-ray phase analysis, energy-dispersive analysis, electron microscopy, diffuse reflectance and impedance spectroscopy. X-ray phase analysis showed that all PEO coatings contain metallic bismuth and titanium oxide in the modifications of rutile and anatase. It is shown that a change in the pulse duration has a significant effect on the morphology, elemental composition and optical properties of the coatings. Analysis of the Mott–Schottky diagrams showed that all the obtained composites are n-type semiconductors. For all bismuth-modified samples, a shift in the potentials of flat bands to the cathode region is observed compared to the unmodified sample, which indicates the formation of a Schottky barrier at the metal-semiconductor interface. The number of charge carriers (N) increases with increasing PEO pulse duration, but in all cases it is lower compared to the Ti/TiO sample. It was found that modification of titanium dioxide films with bismuth leads to an improvement in their optical properties and the emergence of stable photocurrents under the action of visible light.
- Keywords
- плазменно-электролитическое оксидирование титан висмутоодержащие пленки фотоэлектрохимические свойства дендритные структуры
- Date of publication
- 21.08.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 68
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